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| SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION *With TO-3P(H)IS package *High voltage ,high speed APPLICATIONS *Horizontal deflection output for high resolution display *High speed switching regulator output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 8 15 4 50 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance Storage time Fall time CONDITIONS IC=5mA ;IB=0 IC=6A ;IB=1.5A IC=6A ;IB=1.5A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz 8 1 MIN 600 2SC3886A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB ts tf TYP. MAX UNIT V 5.0 1.5 1.0 10 15 3 210 2.5 0.15 V V mA A MHz pF s s Resistive load ICP=6A ;IB1=-IB2=1.2A RL=33.3@ 2 SavantIC Semiconductor www..com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3886A Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 |
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